tsm 7 n 9 0 9 00v n - channel power mosfet 1 / 10 version: a12 to - 220 ito - 220 product summary v ds (v) r ds(on) ( ) i d (a) 9 00 1.9 @ v gs =10v 7 general description the tsm 7 n 9 0 n - channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. features low r ds(on) 1.9 (max.) low gate charge typical @ 4 9 nc (typ.) improve dv/dt capability block diagram n - channel mosfet ordering information part no. package packing tsm 7 n 9 0cz c0 to - 220 50pcs / tube tsm 7 n 9 0ci c0 ito - 220 50pcs / tube absolute maximum rating s ( ta = 25 o c unless otherwise noted ) parameter symbol to - 220 ito - 220 unit drain - source voltage v ds 9 00 v gate - source voltage v gs 30 v continuous drain current t c = 25 o c i d 7 7 * a t c = 100 o c 4.31 4.31 * pulsed drain current * i dm 28 28 * a peak diode rec overy dv/dt (note 3) dv/dt 4.5 v single pulse avalanche energy (note 2 ) e as 106 mj avalanche current (repetitive) (note 1) i ar 7 a repetitive avalanche energy (note 1) e a r 25 mj power dissipation tc = 25 o c p d 250 40.3 w derate above 25 2 0.32 ? /w operating junction temperature t j 150 ? storage temperature range t stg - 55 to +150 o c * limited by maximum junction temperature pin definition: 1. gate 2. drain 3. source
tsm 7 n 9 0 9 00v n - channel power mosfet 2 / 10 version: a12 thermal performance parameter symbol to - 220 ito - 220 unit thermal resistance - junction to case r? jc 0.5 3. 1 o c/w thermal resistance - junction to ambient r? ja 62.5 note s : surface mounted on fr4 board t 10sec electrical specifications ( t c = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 9 00 -- -- v drain - source on - state resistance v gs = 10v, i d = 3.5 a r ds(on) -- 1.52 1.9 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 2 .0 -- 4 .0 v zero gate voltage drain current v ds = 9 00v, v gs = 0v i dss -- -- 1 0 a g ate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transconductance v ds = 3 0v, i d = 3.5 a g fs -- 7 -- s diode forward voltage i s = 7 a, v gs = 0v v sd -- -- 1. 5 v dynamic b total gate charge v ds = 720v, i d = 7a, v gs = 10v q g -- 49 -- nc g ate - source charge q gs -- 7 -- gate - drain charge q gd -- 20 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 1969 -- pf output capacitance c oss -- 133 -- reverse transfer capacitance c rss -- 11 -- switching c turn - on delay time v g s = 10v, i d = 7a, v dd = 45 0 v, r g = 25 t d(on) -- 39 -- n s turn - on rise time t r -- 38 -- turn - off delay time t d(off) -- 155 -- turn - off fall time t f -- 45 -- reverse recovery time v gs = 0v, i s = 7a , di f /dt = 100a/ s t f r -- 464 -- ns reverse reco very charge q f r -- 4.7 -- uc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. v dd = 50v, i as = 7 a , l= 4.1 mh, r g =25 , starting t j =25 guaranteed 100% e as test condition: v dd = 50v, i as =7a, l=1mh, r g = 25 , starting t j = 25 c 3. i s d 7 a, di/dt 200a/ ? s , v dd bv , starting t j =25 4. p ulse test: pulse width 300s , duty cycle 2% 5. b for design reference only, not subject to production testing. 6. c switching time is essentially independent of operating temperature .
tsm 7 n 9 0 9 00v n - channel power mosfet 3 / 10 version: a12 electrical character istics curve ( t c = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm 7 n 9 0 9 00v n - channel power mosfet 4 / 10 version: a12 electrical characteri stics curve ( ta = 25 o c , unless otherwise noted ) drain current vs. case temperature bv dss vs. junction temperature maximum safe operating area capacitance vs. drain - source voltage maximum safe operating area (ito - 220)
tsm 7 n 9 0 9 00v n - channel power mosfet 5 / 10 version: a12 electrical characte ristics curve ( ta = 25 o c , unless otherwise noted ) normalized thermal transient impedance, junction - to - ambient normalized thermal transient impedance, junction - to - ambient (ito - 220)
tsm 7 n 9 0 9 00v n - channel power mosfet 6 / 10 version: a12 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 7 n 9 0 9 00v n - channel power mosfet 7 / 10 version: a12 diode reverse recovery time test circuit & waveform
tsm 7 n 9 0 9 00v n - channel power mosfet 8 / 10 version: a12 to - 220 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 7 n 9 0 9 00v n - channel power mosfet 9 / 10 version: a12 ito - 220 mechanical drawing unit: millimeters marking diagram g = halogen free y = year code ww = week code by calendar year f = factory code
tsm 7 n 9 0 9 00v n - channel power mosfet 10 / 10 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provi ded in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particu lar purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these pro ducts for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
|
